Funding for this research was provided by:
National Natural Science Foundation of China (61974015)
Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China (KFJJ201806)
Key R & D project of Science and technology plan of Sichuan province (2021YFG0139)
Article Title: A Novel Ga2O3 Superjunction LDMOS Using P-Type Diamond with Improved Performance
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited
Publication dates
Date Received: 2022-09-01
Date Accepted:
Online publication date: 2022-10-25