Funding for this research was provided by:
National Natural Science Foundation of China (61974015)
Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China (KFJJ201806)
Key R & D project of Science and technology plan of Sichuan province (2021YFG0139)
Article Title: A Novel Ga 2 O 3 Superjunction LDMOS Using P-Type Diamond with Improved Performance
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2022-09-01
Date Accepted:
Online publication date: 2022-10-25