Lin, Yi-Wen
Huang, Yu-Hsien
Lin, Shan-Wen
Luo, Guang-Li
Lin, Yu-Hsien
Wu, Yung-Chun https://orcid.org/0000-0001-9409-6792
Hou, Fu-Ju
Funding for this research was provided by:
National Science and Technology Council, Taiwan (NSTC-112-2119-M-007-011-MBK)
Article Title: Self-Induced Ge-Doped HfO2 Applied to Ge Stacked Nanowires Ferroelectric Gate-All-Around Field-Effect Transistor with Steep Subthreshold Slope Under O3 Treatment with GeO2 as Interfacial Layer
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2024 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited
Publication dates
Date Received: 2024-03-29
Date Accepted:
Online publication date: 2024-05-22