Guo, Yun-Duo
Wang, An-Feng
Huang, Qi-Min
Wang, Zhen-Yu
Ma, Hong-Ping https://orcid.org/0000-0003-4175-5437
Zhang, Qing-Chun
Funding for this research was provided by:
the Science and Technology Innovation Plan of Shanghai Science and Technology Commission (No. 21DZ1100800)
National Natural Science Foundation of China (No. 62474049)
the Joint Research Plan of sci-tech innovation community in Yangtze River Delta (No.2023CSJG0600)
National Key R&D Program of China (2023YFB4606300)
Article Title: Performance Comparison of Al2O3 Gate Dielectric Grown on 4H-SiC Substrates via Thermal and Plasma-Enhanced Atomic Layer Deposition Methods
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2025 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-11-25
Date Accepted:
Online publication date: 2025-02-06