Huang, Hsuan-Yao https://orcid.org/0009-0005-9813-123X
Liu, Cheng-Xiang
Chen, Yu
Chang, Kuan-Pang
Yang, Tsung-Ying
Weng, You-Chen
Wu, Jui-Sheng
Huang, Cheng-Jun
Chang, Edward Yi
Funding for this research was provided by:
Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan (113-2218-E-A49-020-)
Article Title: Comparison of Digital and Atomic Layer Etching for Gate Recess in AlGaN/GaN MOSHEMTs for Ka-Band
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2025 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited
Publication dates
Date Received: 2025-06-29
Date Accepted:
Online publication date: 2025-10-06