Chen, Kuan-Lun https://orcid.org/0000-0003-0913-5940
Chou, Hsiang https://orcid.org/0009-0009-0718-1653
Lin, Kai-Sheng https://orcid.org/0009-0001-7083-4196
Chen, Yu https://orcid.org/0009-0000-1770-0095
Yang, Hsiang-Chao https://orcid.org/0009-0009-3592-9083
Weng, You-Chen https://orcid.org/0000-0003-3298-414X
Yang, Chih-Yi https://orcid.org/0000-0002-7436-8356
Jang, Wen-Yueh https://orcid.org/0009-0003-6643-9104
Chang, Shou-Zen https://orcid.org/0009-0007-5145-9558
Chang, Edward Yi https://orcid.org/0000-0003-1616-5240
Lin, Chun-Hsiung https://orcid.org/0000-0002-4587-7215
Funding for this research was provided by:
Powerchip Semiconductor Manufacturing Company
Article Title: Characteristics of GaN MIS-HEMT with ZrO 2 /HfO 2 Superlattice Gate Dielectric Layer
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2026 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2025-09-26
Date Accepted: 2026-01-20
Online publication date: 2026-01-29