Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (107-2221-E-006-189-MY3)
Article Title: Enhanced Ga2O3-Based RRAM via Stacked Bilayer ZnO/Ga2O3
Journal Title: ECS Advances
Article Type: paper
Copyright Information: © 2022 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited
Publication dates
Date Received: 2022-05-11
Date Accepted:
Online publication date: 2022-06-27