Mathematical analysis of spin transport in topological insulators to optimize memory devices performance using numerical simulations
Crossref DOI link: https://doi.org/10.30574/wjarr.2024.23.1.2291
Published Online: 2024-07-30
Update policy: https://doi.org/10.30574/wjarr.ourcrossmarkpolicy
Moses Udoisoh,
Akpan Samuel Akpan,