Ding, Xiangxiang https://orcid.org/0000-0001-7719-7508
Wang, Xiangyu
Feng, Yulin
Shen, Wensheng
Liu, Lifeng
Funding for this research was provided by:
National Key Research and Development Program (2017YFB0405600)
National Natural Science Foundation of China (61334007)
Article Title: Low operation current of Si/HfO 2 double layers based RRAM device with insertion of Si film
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-09-30
Date Accepted: 2020-01-14
Online publication date: 2020-03-03