Funding for this research was provided by:
Science Challenge Project (TZ2016003-1)
Article Title: Total-ionizing-dose induced enhanced hot-carrier injection effect in the 130 nm partially depleted SOI I/O nMOSFETs
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-06-20
Date Accepted: 2020-01-26
Online publication date: 2020-02-17