Article Title: Hydrogen-induced defects in crystalline silicon during growth of an ultrathin a-Si:H layer
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-10-27
Date Accepted: 2020-02-10
Online publication date: 2020-03-05