Miyamoto, Hironobu
Okamoto, Yasuhiro
Nakayama, Tatsuo
Kawaguchi, Hiroshi
Fujita, Machiko
Ueda, Takehiro
Sawada, Masami
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga1−x N back barrier
Copyright information: © 2020 The Japan Society of Applied Physics
Publication dates
Date received: 2019-09-30
Date accepted: 2020-02-17
Online publication date: 2020-03-18