Miyamoto, Hironobu
Okamoto, Yasuhiro
Nakayama, Tatsuo
Kawaguchi, Hiroshi
Fujita, Machiko
Ueda, Takehiro
Sawada, Masami
Article Title: Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga 1− x N back barrier
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-09-30
Date Accepted: 2020-02-17
Online publication date: 2020-03-18