Funding for this research was provided by:
National Research Foundation of Korea (2013R1A1A1007296)
Sangji University (2019)
Article Title: Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-12-04
Date Accepted: 2020-03-02
Online publication date: 2020-03-18