Nemoto, Hiroki
Okamoto, Dai https://orcid.org/0000-0003-2494-1764
Zhang, Xufang
Sometani, Mitsuru
Okamoto, Mitsuo
Hatakeyama, Tetsuo
Harada, Shinsuke
Iwamuro, Noriyuki https://orcid.org/0000-0002-5027-4718
Yano, Hiroshi
Funding for this research was provided by:
Japan Society for the Promotion of Science (KANENHI Grant Number JP16H04326)
Article Title: Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-12-28
Date Accepted: 2020-03-09
Online publication date: 2020-03-30