Song, Young Suh
Jang, Taejin
Min, Kyung Kyu
Baek, Myung-Hyun
Yu, Junsu
Kim, Yeonwoo
Lee, Jong-Ho
Park, Byung-Gook
Article Title: Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al 2 O 3 /HfO 2 /SiO 2 /Al 2 O 3 /SiO 2 /Si structure
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-02-04
Date Accepted: 2020-03-23
Online publication date: 2020-06-01