Shimizu, Tsunashi
Akiyama, Toru https://orcid.org/0000-0002-2800-2011
Pradipto, Abdul-Muizz
Nakamura, Kohji
Ito, Tomonori https://orcid.org/0000-0003-1160-9244
Kageshima, Hiroyuki https://orcid.org/0000-0003-3136-2525
Uematsu, Masashi
Shiraishi, Kenji
Article Title: Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO 2 interface
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-01-06
Date Accepted: 2020-04-02
Online publication date: 2020-04-28