Shimizu, Tsunashi
Akiyama, Toru https://orcid.org/0000-0002-2800-2011
Pradipto, Abdul-Muizz
Nakamura, Kohji
Ito, Tomonori https://orcid.org/0000-0003-1160-9244
Kageshima, Hiroyuki https://orcid.org/0000-0003-3136-2525
Uematsu, Masashi
Shiraishi, Kenji
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface
Copyright information: © 2020 The Japan Society of Applied Physics
Publication dates
Date received: 2020-01-06
Date accepted: 2020-04-02
Online publication date: 2020-04-28