Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application
Copyright information: © 2020 The Japan Society of Applied Physics
Publication dates
Date received: 2019-12-25
Date accepted: 2020-04-06
Online publication date: 2020-05-05