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Four-terminal polycrystalline Ge 1− x Sn x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Crossref DOI link: https://doi.org/10.35848/1347-4065/ab8b74

Published Online: 2020-05-07

Published Print: 2020-05-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Miyazaki, Ryo

Hara, Akito
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Text and Data Mining valid from 2020-05-07
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Article Title: Four-terminal polycrystalline Ge 1− x Sn x thin-film transistors using copper-induced crystallization on glass substrates and their application to enhancement/depletion inverters

Journal Title: Japanese Journal of Applied Physics

Article Type: paper

Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

Publication dates

Date Received: 2020-01-09

Date Accepted: 2020-04-20

Online publication date: 2020-05-07

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