Yokogawa, Ryo https://orcid.org/0000-0003-1762-4664
Kobayashi, Hiroto
Numasawa, Yohichiroh
Ogura, Atsushi https://orcid.org/0000-0003-2008-7695
Nishizawa, Shin-ichi https://orcid.org/0000-0001-5793-4443
Saraya, Takuya https://orcid.org/0000-0002-3796-7747
Ito, Kazuo
Takakura, Toshihiko
Suzuki, Shinichi
Fukui, Munetoshi
Takeuchi, Kiyoshi https://orcid.org/0000-0002-8392-1029
Hiramoto, Toshiro https://orcid.org/0000-0001-9469-2631
Funding for this research was provided by:
New Energy and Industrial Technology Development Organization (JPN10022)
Article Title: Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-07-21
Date Accepted: 2020-10-15
Online publication date: 2020-11-02