Kim, Hyun Woo
Kwon, Daewoong
Article Title: Double-gate tunnel field-effect transistor with inner doping and spacer regions
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-11-04
Date Accepted: 2020-11-09
Online publication date: 2020-11-26