Zhang, Yuewei
Mauze, Akhil
Alema, Fikadu
Osinsky, Andrei
Itoh, Takeki
Speck, James S.
Funding for this research was provided by:
Air Force Office of Scientific Research (FA9550-18-1-0059)
Office of Naval Research (N00014-16-P-2058)
Defense Threat Reduction Agency (HDTRA 11710034)
Article Title: β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics
Publication dates
Date Received: 2020-09-09
Date Accepted: 2020-11-29
Online publication date: 2020-12-18