Honda, Tatsuya
Yano, Hiroshi https://orcid.org/0000-0001-7241-7014
Funding for this research was provided by:
New Energy and Industrial Technology Development Organization (SIP "Next-generation power electronics")
Article Title: Simple method to estimate the shallow interface trap density near the conduction band edge of MOSFETs using Hall effect measurements
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2020-10-12
Date Accepted: 2020-12-14
Online publication date: 2021-01-08