Chang, Wen Hsin https://orcid.org/0000-0002-8501-6276
Okada, Naoya https://orcid.org/0000-0002-0512-8324
Horikawa, Masayo
Endo, Takahiko
Miyata, Yasumitsu
Irisawa, Toshifumi
Article Title: ALD-ZrO2 gate dielectric with suppressed interfacial oxidation for high performance MoS2 top gate MOSFETs
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2021 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2020-10-06
Date Accepted: 2020-12-25
Online publication date: 2021-01-11