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Room-temperature bonded silicon on insulator wafers with a dense buried oxide layer formed by annealing a deposited silicon oxidation layer and surface-activated bonding

Crossref DOI link: https://doi.org/10.35848/1347-4065/abe2b9

Published Online: 2021-02-19

Published Print: 2021-03-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Koga, Yoshihiro

Kurita, Kazunari
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Article Title: Room-temperature bonded silicon on insulator wafers with a dense buried oxide layer formed by annealing a deposited silicon oxidation layer and surface-activated bonding

Journal Title: Japanese Journal of Applied Physics

Article Type: paper

Copyright Information: © 2021 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

Publication dates

Date Received: 2021-01-14

Date Accepted: 2021-02-02

Online publication date: 2021-02-19

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