Kamimura, Takafumi https://orcid.org/0000-0002-5124-3737
Nakata, Yoshiaki
Higashiwaki, Masataka https://orcid.org/0000-0003-2821-3107
Funding for this research was provided by:
Ministry of Internal Affairs and Communications (181603005)
Article Title: Effect of (AlGa)2O3 back barrier on device characteristics of β-Ga2O3 metal-oxide-semiconductor field-effect transistors with Si-implanted channel
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-01-13
Date Accepted: 2021-02-04
Online publication date: 2021-02-19