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Effect of (AlGa) 2 O 3 back barrier on device characteristics of β -Ga 2 O 3 metal-oxide-semiconductor field-effect transistors with Si-implanted channel

Crossref DOI link: https://doi.org/10.35848/1347-4065/abe3a4

Published Online: 2021-02-19

Published Print: 2021-03-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Kamimura, Takafumi https://orcid.org/0000-0002-5124-3737
Nakata, Yoshiaki

Higashiwaki, Masataka https://orcid.org/0000-0003-2821-3107
Funding

Funding for this research was provided by:

Ministry of Internal Affairs and Communications (181603005)
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Text and Data Mining valid from 2021-02-19
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Article Title: Effect of (AlGa) 2 O 3 back barrier on device characteristics of β -Ga 2 O 3 metal-oxide-semiconductor field-effect transistors with Si-implanted channel

Journal Title: Japanese Journal of Applied Physics

Article Type: paper

Copyright Information: © 2021 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

Publication dates

Date Received: 2021-01-13

Date Accepted: 2021-02-04

Online publication date: 2021-02-19

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