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Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al<sub>2</sub>O<sub>3</sub> for high-performance logic device and electrical/thermal co-design

Crossref DOI link: https://doi.org/10.35848/1347-4065/abec5c

Published Online: 2021-03-25

Published Print: 2021-06-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Song, Young Suh https://orcid.org/0000-0002-5229-1693
Kim, Sangwan https://orcid.org/0000-0002-6492-7740
Kim, Garam https://orcid.org/0000-0001-6517-7120
Kim, Hyunwoo

Lee, Jong-Ho https://orcid.org/0000-0002-9485-5434
Kim, Jang Hyun https://orcid.org/0000-0002-5936-4314
Park, Byung-Gook https://orcid.org/0000-0002-2962-2458
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Text and Data Mining valid from 2021-03-25
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Article Title: Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design

Journal Title: Japanese Journal of Applied Physics

Article Type: paper

Copyright Information: © 2021 The Japan Society of Applied Physics

Publication dates

Date Received: 2020-11-30

Date Accepted: 2021-03-05

Online publication date: 2021-03-25

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