Iino, Daiki
Tanida, Satoshi
Kurihara, Kazuaki
Fukumizu, Hiroyuki
Sakai, Itsuko
Abe, Junko
Fukuhara, Jota
Tanaka, Rei
Tanaka, Tomoyuki
Kikura, Jou
Kakiuchi, Hiroaki
Yasutake, Kiyoshi
Ohmi, Hiromasa
Hayashi, Hisataka
Article Title: Reactive ion etching process of SiO 2 film using on-site synthesized C 2 F 4 from CF 4
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2021-02-16
Date Accepted: 2021-04-20
Online publication date: 2021-05-06