Irokawa, Yoshihiro
Ohki, Tomoko
Nabatame, Toshihide
Koide, Yasuo
Funding for this research was provided by:
JSPS KAKENHI (20K04587)
Ministry of Education, Culture, Sports, Science and Technology (JPJ005357)
Article Title: Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2021-04-25
Date Accepted: 2021-05-18
Online publication date: 2021-06-01