Liu, Hu https://orcid.org/0000-0003-3960-4875
Yang, Lin-An
Zhang, Huawei
Zhang, Bingtao
Zhang, Wenting
Funding for this research was provided by:
the Project of Construction of a strong Province with Intellectual Property Rights (20ZSCQ006)
National Natural Science Foundation of China (61962034)
Youth Science Foundation of Lanzhou Jiaotong University (2017032)
Article Title: An In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As double hetero-junction junctionless TFET
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2021-01-24
Date Accepted: 2021-05-27
Online publication date: 2021-06-10