Doi, Takuma https://orcid.org/0000-0001-5531-198X
Shibayama, Shigehisa https://orcid.org/0000-0002-5202-3904
Sakashita, Mitsuo
Shimizu, Mitsuaki https://orcid.org/0000-0002-6925-6173
Nakatsuka, Osamu https://orcid.org/0000-0002-5198-0737
Funding for this research was provided by:
JSPS KAKENHI (JP20J15538)
Article Title: Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2021-03-31
Date Accepted: 2021-06-11
Online publication date: 2021-06-28