Mo, Fei http://orcid.org/0000-0002-5848-4912
Mei, Xiaoran
Saraya, Takuya
Hiramoto, Toshiro http://orcid.org/0000-0001-9469-2631
Kobayashi, Masaharu http://orcid.org/0000-0002-7945-6136
Article Title: A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2021-09-30
Date Accepted: 2021-11-23
Online publication date: 2022-02-09