Funding for this research was provided by:
National Research Foundation of Korea (NRF- 2021R1C1C1006147)
Samsung (Samsung Electronics’ University R&D program)
Article Title: Top-gate field-effect transistor based on monolayer WS2 with an ion-gel gate dielectric
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2022 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-11-21
Date Accepted: 2022-01-14
Online publication date: 2022-02-25