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The electrical conductivity of cubic (In1−x Ga x )2O3 films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer

Crossref DOI link: https://doi.org/10.35848/1347-4065/ac4ec7

Published Online: 2022-03-16

Published Print: 2022-04-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Papadogianni, Alexandra https://orcid.org/0000-0002-1522-0861
Nagata, Takahiro https://orcid.org/0000-0002-8591-2943
Bierwagen, Oliver https://orcid.org/0000-0002-4746-5660
Funding

Funding for this research was provided by:

Leibniz-Gemeinschaft (ScienceCampus GraFOx)
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Article Title: The electrical conductivity of cubic (In1−x Ga x )2O3 films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer

Journal Title: Japanese Journal of Applied Physics

Article Type: paper

Copyright Information: © 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

Publication dates

Date Received: 2021-09-29

Date Accepted: 2022-01-24

Online publication date: 2022-03-16

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