Sun, Haozhe https://orcid.org/0000-0001-8719-7341
Lin, Wei
Yin, Ruiyuan https://orcid.org/0000-0002-1665-2770
Chen, Jianguo
Hao, Yilong
Shen, Bo
Wang, Maojun
Jin, Yufeng
Funding for this research was provided by:
National Key Research and Development Program of China (2017YFB0403000)
National Natural Science Foundation of China (11634002)
Article Title: Evaluation of the border traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS structure with long time constant using quasi-static capacitance voltage method
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2022 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-09-03
Date Accepted: 2022-05-17
Online publication date: 2022-06-17