Park, Yeongeun
Yoon, Hyowon
Kim, Chaeyun
Kim, Gwangjae
Kang, Gyuhyeok
Seok, Ogyun https://orcid.org/0000-0002-8585-5002
Ha, Min-Woo https://orcid.org/0000-0001-6593-227X
Funding for this research was provided by:
Ministry of Trade, Industry and Energy (20022501)
Article Title: Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2023 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2022-11-15
Date Accepted: 2022-12-11
Online publication date: 2023-01-06