Nunomura, Shota https://orcid.org/0000-0002-6746-2619
Sakata, Isao https://orcid.org/0000-0003-1331-0588
Misawa, Tatsuya
Kawai, Shinji
Kamataki, Kunihiro https://orcid.org/0000-0002-3642-4249
Koga, Kazunori https://orcid.org/0000-0002-9214-7493
Shiratani, Masaharu https://orcid.org/0000-0002-4103-3939
Article Title: Silicon surface passivation with a-Si:H by PECVD: growth temperature effects on defects and band offset
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2023 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-03-14
Date Accepted: 2023-06-22
Online publication date: 2023-08-01