Sumiya, Masatomo https://orcid.org/0000-0003-0960-3812
Goto, Osamu
Takahara, Yuki
Imanaka, Yasutaka https://orcid.org/0000-0003-2804-4438
Sang, Liwen
Fukuhara, Noboru
Konno, Taichiro
Horikiri, Fumimasa https://orcid.org/0000-0001-6710-3045
Kimura, Takeshi
Uedono, Akira https://orcid.org/0000-0001-6224-4869
Fujikura, Hajime
Funding for this research was provided by:
National Institute for Materials Science
Article Title: Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2023 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-05-12
Date Accepted: 2023-07-11
Online publication date: 2023-08-01