Xu, Hui Fang
Cui, Guo Wei
Li, Yong
He, Chao
Funding for this research was provided by:
University Natural Science Research Key Project of Anhui Province (2023AH051845)
excellent talents supported project of colleges and universities (gxgnfx2021139)
Anhui Science and Technology University Natural Science Key Project (2021zrzd03)
a horizontal cooperation project (880937)
Article Title: Two-dimensional analytical model for fully depleted SOI MOSFETs with vertical trapezoid doping including effects of the interface trapped charges
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2023 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-08-10
Date Accepted: 2023-10-25
Online publication date: 2023-11-24