Liu, J. https://orcid.org/0000-0001-9126-878X
Young, L. B. https://orcid.org/0000-0003-2569-6094
Lin, Y. H. G. https://orcid.org/0000-0002-0757-4109
Wan, H. W. https://orcid.org/0000-0002-7896-5844
Cheng, Y. T. https://orcid.org/0000-0002-2525-0749
Funding for this research was provided by:
Ministry of Education through Higher Education Sprout Project (112L893604)
Ministry of Science and Technology, Taiwan (110-2112-M-002-036-)
National Science and Technology Council (111-2112-M-007-043-)
Taiwan Semiconductor Research Institute in Taiwan (JDP112-Y1-022-)
Article Title: GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2023 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-08-28
Date Accepted: 2023-11-05
Online publication date: 2023-12-05