Murakami, Yutoku
Nagamizo, Sachika
Tanaka, Hajime
Mori, Nobuya
Article Title: Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-10-13
Date Accepted: 2024-01-22
Online publication date: 2024-02-22