Matsuo, Haruki
Yamashita, Hiroki
Shimada, Yusuke
Ishihara, Noritaka
Seto, Satoshi
Morita, Sho
Ukishima, Masafumi
Arayashiki, Yusuke
Kajiwara, Suzuka
Murayama, Akiyuki
Nishiyama, Katsuya
Sugimae, Kikuko
Mori, Shinji
Saito, Yuta
Shundo, Takeshi
Kanno, Yurika
Kamiya, Hiroyuki
Uchiyama, Yasuhiro
Aisou, Fumiki
Sekine, Katsuyuki
Ohtani, Norio
Article Title: Effects of crystallinity of silicon channels formed by two metal-induced lateral crystallization methods on the cell current distribution in NAND-type 3D flash memory
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-10-15
Date Accepted: 2024-02-07
Online publication date: 2024-03-20