Wu, Yuzhang https://orcid.org/0000-0002-6173-4994
Magari, Yusaku https://orcid.org/0000-0001-9655-4283
Ghediya, Prashant R. https://orcid.org/0000-0001-9953-0471
Zhang, Yuqiao https://orcid.org/0000-0001-7579-4923
Matsuo, Yasutaka https://orcid.org/0000-0002-5071-0284
Ohta, Hiromichi https://orcid.org/0000-0001-7013-0343
Funding for this research was provided by:
Japan Society for the Promotion of Science (19H05791)
National Natural Science Foundation of China (52202242)
National Science Foundation of the Jiangsu Higher Education Institutions of China (22KJB430002)
Start-Up Fund of Jiangsu University (5501310015)
Advanced Research Infrastructure for Materials and Nanotechnology in Japan (JPMXP1223HK0082)
Article Title: High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-05-01
Date Accepted: 2024-07-02
Online publication date: 2024-07-25