Fujimoto, Yuta
Hikavyy, Andriy
Porret, Clement
Rosseel, Erik
Rengo, Gianluca
Loo, Roger
Article Title: Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-05-12
Date Accepted: 2024-08-30
Online publication date: 2024-09-20