Toshimitsu, Shion
Tachiki, Keita https://orcid.org/0000-0003-0795-0634
Kaneko, Mitsuaki https://orcid.org/0000-0001-5629-0105
Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090
Funding for this research was provided by:
Japan Society for the Promotion of Science (21H05003)
Article Title: Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-07-25
Date Accepted: 2024-09-04
Online publication date: 2024-09-30