Hori, Koki https://orcid.org/0009-0004-6537-9805
Chang, Wen Hsin https://orcid.org/0000-0002-8501-6276
Irisawa, Toshifumi https://orcid.org/0000-0002-8801-7688
Ogura, Atsushi https://orcid.org/0000-0003-2008-7695
Okada, Naoya https://orcid.org/0000-0002-0512-8324
Article Title: Layered NbS2 contacts formed via H2S reaction with Nb for high-performance WSe2-channel p-type transistors
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-10-14
Date Accepted: 2024-11-25
Online publication date: 2024-12-27