Kim, Sung-Hun https://orcid.org/0000-0002-3522-7307
Hikake, Kaito
Li, Zhuo
Itoya, Yuki
Sakai, Kota
Saraya, Takuya
Hiramoto, Toshiro https://orcid.org/0000-0001-9469-2631
Kobayashi, Masaharu https://orcid.org/0000-0002-7945-6136
Funding for this research was provided by:
Taiwan Semiconductor Manufacturing Company (Advanced Semiconductor Research Project)
Core Research for Evolutional Science and Technology (23830112)
Japan Society for the Promotion of Science (21H04549)
Japan Science and Technology Agency (ASPIRE / 23836464)
Article Title: Nanosheet oxide semiconductor FETs with ALD InZnO x compared to InGaO x
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2025 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-11-10
Date Accepted: 2025-01-19
Online publication date: 2025-03-11