Chen, Yutong
Jin, Zhao
Han, Xueyang https://orcid.org/0000-0002-6651-1343
Oka, Hiroshi https://orcid.org/0000-0002-6571-3461
Mori, Takahiro
Toprasertpong, Kasidit https://orcid.org/0000-0003-4206-8698
Takenaka, Mitsuru https://orcid.org/0000-0002-9852-1474
Takagi, Shinichi https://orcid.org/0000-0002-5601-2604
Article Title: Accurate evaluation of effective mobility in Si MOSFETs at cryogenic temperatures using the quasi-static C–V method
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2025 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-10-14
Date Accepted: 2025-02-11
Online publication date: 2025-03-11