Radzuan, Hadirah A.
Fukumitsu, Masaya
Ochi, Ryota https://orcid.org/0000-0003-0389-2414
Nakamura, Yusui
Sato, Taketomo https://orcid.org/0000-0001-5032-6947
Yatabe, Zenji https://orcid.org/0000-0003-2069-6677
Funding for this research was provided by:
Japan Society for the Promotion of Science (JP23K03973)
Article Title: Low interface state density in Al2O3/n-GaN MOS capacitors with rapid deposition of Al2O3 gate insulator fabricated via mist-CVD
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2025-05-02
Date Accepted: 2025-06-30
Online publication date: 2025-07-15