Hatakeyama, Yuki https://orcid.org/0000-0003-3012-1631
Narita, Tetsuo https://orcid.org/0000-0002-0849-360X
Kachi, Tetsu https://orcid.org/0000-0002-4300-5720
Akazawa, Masamichi https://orcid.org/0000-0001-6528-5973
Funding for this research was provided by:
Ministry of Education, Culture, Sports, Science and Technology (JPJ009777)
Japan Society for the Promotion of Science (JP23K26131)
Article Title: Detection of charge transition level of near-surface hydrogen interstitials introduced into Mg-ion-implanted GaN by annealing
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2025 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2025-07-09
Date Accepted: 2025-09-10
Online publication date: 2025-09-24