Kong, Moufu
Deng, Hongfei
Ai, Zhaoyu
Yang, Hongqiang
Zhang, Bingke
Wu, Peifei
Funding for this research was provided by:
Key R & D project of science and technology plan of Sichuan province (2023YFG0005)
the Key R & D project of science and technology plan of Sichuan province (2021YFG0139)
Article Title: Demonstration of high voltage SiC LDMOS integrated with a gate driver buffer for SiC power integrated circuit
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2025 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2025-07-28
Date Accepted: 2025-09-16
Online publication date: 2025-09-30