Kong, Moufu
Yuan, Bingling
Jia, Jiaru
Deng, Hongfei
Feng, Qizhi
Dong, Yufeng
Zhang, Bingke
Funding for this research was provided by:
the Central Guiding Local Science and Technology Development Special Project of Sichuan (2024ZYD0310)
the Key R & D project of science and technology plan of Sichuan province (2023YFG0005)
Article Title: A novel SiC trench JFET with 2.5 MeV high-energy ion implantation and floating trench field limiting ring termination
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2026 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2025-11-06
Date Accepted: 2026-01-06
Online publication date: 2026-01-22